伊大人香蕉久久网,精品国产www高清免费视频,草榴免费高清视频在线观看,快手女主播不雅视频,宅男宅女18岁禁止,三级片网站或视频,日本人妻丰满熟妇啪啪,久久99精品视频

CN EN
Home
About Us
Newpros
650V Super Junction N-Channel MOSFET
650V Super Junction N-Channel MOSFET Back
 PDF

Introduction 1. The 650V series superjunction products designed by the special multi-layer epitepity process of Yangjie Technology can meet the application requirements of low conduction loss, low switching loss, EMI compatibility and different circuit topologies. The products have good performance of internal conduction resistance (Rdson) and gate charge (Qg), reduce conduction loss and switching loss. Lower switching noise and lower Trr improve system stability and performance.
2. Switch speed and EMI balance, lower Trr characteristics, suitable for charger, power adapter, TV power supply, industrial power supply and other fields, can also meet some half-bridge or various bridge circuit topology application requirements.
Features 1. Adopt the special multi-layer epitaxial process design of Yangjie Technology, with higher process stability and reliability, switching speed and EMI balance, lower Trr characteristics;
2. The series of products have the characteristics of low on-resistance, low gate charge, low on-loss and low switching loss;
3. To-252 /ITO-220AB package, with better calorific value characteristics.
SPECIFICATION
Related new products

IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application

SOD-123HE TVS Diode

TO-252 Package Power Transistor for Motor Driver & High Power Frequency Converter

IGBT high frequency series C1 module

100V TOLL Package MOSFET

N150V MOSFET for Industrial Control

ESD Products for Panel Ports

Low VCE(sat)?3A?Bipolar?Transistor

High-side+Low-side PDFN5060 N30V Mosfet for PC Mainboard

P 40V Trench MOSFET for Load Switch Application